Heated Ion Impantation Technology for FinFET Application.Instability in Low Energy Beams extracted from BF3 Plasma.A study on Silicon carbide (SiC) wafer using ion implantation.Pre-sputter Technology for GaN Acceptor Doping by Mg-ion Implantation.Multi-Cusp Ion Source for Doping System Process of FPD Manufacturing.Ion sources for Ion Implantation Technology.Damage control with cluster ion implantation.High Dose Dopant Implantation to Heated Si Substrate without Amorphous Layer Formation for Fin FET Applications.NISSIN iG5 Implantation Tool for Generation 5.5 in the Flat Panel Display Industry.Multi-Cusp Ion Source for Gen 5.5 Doping System.Comparison of BF2, In & Ga Dopant for 22nm Node HALO Implantation.Phosphorous TED Suppression with Cluster Carbon Co-implantation at Low Temperature.Phosphorous TED Suppression and Activation Enhancement with Cluster Carbon Co-implantation.Neutralization of Space Charge in magnetic field by electrons supplied from silicon based field emitter arrays.IMPHEAT high temperature ion implantation system.Characteristics of BF2, Ga and In implanted Si after FLA and RTA annealing.Neutralization of Space Charge on high-current low-energy ion beam by low-energy electrons supplied from silicon based field emitter arrays.Erosion of Extraction Electrodes of Ion Sources due to Sputtering.Plasma Sputter-type Ion Source with Wire Electrodes for Low-energy Gallium Ion Extraction.Effects of Cluster Carbon Implantation at Low Temperature on Damage Recovery after Rapid Thermal Annealing.Suppression of Phosphorus diffusion using cluster Carbon co-implantation.Low energy electron source panel with carbon nanotube.Suppression of Divergence of Low Energy Ion Beams by Space Charge Neutralization with Low Energy Electrons Emitted from Field Emitter.Mass Filtering Function of Magnetic Boundaries in Multi-Cusp Ion Source.Photo-Induced Carrier Recombination Properties of Sillicon caused by 2H+ Implantation.Development of Medium Current Implanter “IMPHEAT” for SiC.Ion Beam Sweeping using High Temperature Super Conducting Magnet.Development of a Compact Ion Source with a Hot Hollow Cathode.Aluminum Ion Beam Production for Medium Current Implanter.Accurate Control of Dose Distribution under Pressure Variation for Low Temperature Polycrystalline-silicon TFT.Carrier Activation in Cluster Boron implanted Si.Collimator magnet with functionally defined profile for ion implantation.Production of a Narrow Magnetized Plasma by a High Temperature Cathode.Ion Beam Current Characteristics of Bernas-Type Ion Source with Co-Axial Cathode.Advanced Middle-High Energy Range Medium Current Implanter EXCEED9600A.Development of a Co-Axial Hot Cathode for Magnetized Ion Source Plasma.Neutralization of Space Charge for Low Energy Ion Beams Using Field Emitters.High Productivity Implantation “PARTIAL IMPLANT”.Increase of Boron Ion Beam Current Extracted from a Multi-Cusp Ion Source in an Ion Doping System with Mass Separation.Development of an Ion Beam Irradiation System for Liquid Crystal Alignment Layer Production.Cluster Ion Implanter for beyond 45nm node novel device applications.
Ultra-low thermal budget CMOS process using flash lamp annealing for 45nm metal/high-k FETs.Simulation on the Effect of Halo Implantation Precision on the Performance of 36nm NMOSFET Device.Cluster Ion Implantation System for beyond 45nm Device Fabrication.Development of Nissin new boron cluster ion implanter.Ion beam irradiation system for LC alignment process.Development of an Ion Beam Aligner for LCD.Increase of Beam Current Mass-Separated by Long Gap Dipole Sector Magnet for S/D Process in FPD manufacturing.High dopant activation and low damage P+ USJ formation.Charging mechanism during ion implantation without charge compensation.Nissin Ion Equipment Indirectly Heated Cathode Ion Source.Implantation characteristics by boron cluster ion implantation.A Beam Line System for a Commercial Borohydride Ion Implanter.High performance medium current ion implanter system EXCEED3000AH-G3.You are also welcome to contact sales team at any time to learn more about our Nissin Ion Implanters. We have linked to the research papers currently online, and encourage you to contact us if you’d like to learn more about the papers, reports, and information not listed here. We have designed and developed ion implanters for many decades, backed by years of research published throughout many reputable journals.īelow, you’ll find a list of information and resources that relate to ion implantation, as well as data and performance of our ion implanter products. Nissin Ion Equipment provides ion implanters that are used by organizations across many industries, especially those working with SiC and Silicon wafer manufacturing.
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